专利内容由知识产权出版社提供
专利名称：METAL WIRING STRUCTURE FOR
INTEGRATION WITH THROUGH SUBSTRATEVIAS
发明人：David S. Collins,Alvin Joseph,Peter J.
Lindgren,Anthony K. Stamper,Kimball M.Watson
申请号：US13080716申请日：20110406
公开号：US20110185330A1公开日：20110728
专利附图：
摘要：An array of through substrate vias (TSVs) is formed through a semiconductorsubstrate and a contact-via-level dielectric layer thereupon. A metal-wire-level dielectriclayer and a line-level metal wiring structure embedded therein are formed directly onthe contact-via-level dielectric layer. The line-level metal wiring structure includescheesing holes that are filled with isolated portions of the metal-wire-level dielectriclayer. In one embodiment, the entirety of the cheesing holes is located outside the areaof the array of the TSVs to maximize the contact area between the TSVs and the line-level metal wiring structure. In another embodiment, a set of cheesing holes overlying anentirety of seams in the array of TSVs is formed to prevent trapping of any platingsolution in the seams of the TSVs during plating to prevent corrosion of the TSVs at theseams.
申请人：David S. Collins,Alvin Joseph,Peter J. Lindgren,Anthony K. Stamper,Kimball M.Watson
地址：Williston VT US,Williston VT US,Essex Junction VT US,Williston VT US,EssexJunction VT US
国籍：US,US,US,US,US
更多信息请下载全文后查看